Super Stable Semitransparent Perovskite Solar Modules for 4-terminal Perovskite-Silicon Tandem Modules via Engineering of the Polymeric Hole Transport Layer and Surface Passivation

Narges Yaghoobi Nia, Mahmoud Zendehdel, Harshavardhan Reddy Sathy, Luigi Schirone, Aldo Di Carlo

Abstract:

Semitransparent perovskite solar cells (ST-PSCs) and modules (ST-PSMs) gained a markedly improving interest among the perovskite and photovoltaic communities not only because of their marvellous properties such as, cheap in manufacturing, high charge carrier mobility, high open-circuit voltage, intense broadband absorption, long carrier diffusion length as well as flexibility toward different substrates and transparrency [1,2] which make them as an unique option for building-integrating photovoltaics (BIPVs) [3], but also due to their key role as fundamental part of the perovskite-based multijunction photovoltaics [4]. There are some important key factors in ST-PSCs e.g., stability of the HTL layer against aggressive deposition methods of the transparent back contact electrode [5] and overall stability of the complete cell against thermal and light stresses which need to be carefully addressed during any optimization process [6]. On the other hand, up-scaling of the perovskite photovoltaics from lab-scale cells to large area modules is an important step toward industrial production and commercialization of this emerging thin film solar cells [7]. Various types of efficient and stable perovskite solar modules have been fabricated by using different approaches e.g., crystal engineering [8,9], polaron arrangement [10], doping strategy [11], blade-spin coating of 3D/2D perovskite layers [12]. However, despite some few reports about fabrication of ST-PSMs [13], the research on this type of photovoltaic modules is still in infancy stage. Here, by using a combination of engineering of the polymeric HTLs and 2D perovskite passivation, high performance ST-PSMs are fabricated reaching beyond 13% photoconversion efficiency (PCE) on 47 cm2 active area. Combination of doping strategy and polaron arrangement of the poly(triaryl)amine (PTAA) layer and 2D perovskite passivation of the perovskite defects not only led to improve the tolerance of the deposited layers against sputtering of the TCO back contact (without deposition of any additional buffer layers) and Laser patterning, but also markedly enhanced the overall PCE and stability of the fabricated ST-PSMs. The ST-PSM retains more than 92 % (T92) of its initial PCE after 1400 h light soaking (ISOS protocol). Finally, 4-terminal perovskite-Si multijunction module has been fabricated achieving 21.3 % PCE on such large area.

 

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